rev 1. 2 1 i - 27 - 2 n - & p - channel enhancement mode field effect transistor p a 607ua sot - 23 - 6 halogen - free & lead - free niko - sem features ? pb?free, halogen free and rohs compliant. ? low r ds(on) to minimize conduction losses. ? ohmic region good r ds(on) ratio. ? optimized gate charge to minimize switching losses. ? esd protection ? hbm class : 1 c. applications ? protection circuits applications. ? logic /load switch circuits applications . absolute maximum ratings (t a = 25 c unless otherwise noted) parameters/test conditions symbol n - channel p - channel units drain - source voltage v d s 20 - 20 v gate - source voltage v gs 10 1 2 v continuous drain current t a = 25 c i d 0.9 6 - 0.68 a t a = 70 c 0. 76 - 0.54 pulsed drain current 1 i dm 3 - 2.1 power dissipation t a = 25 c p d 0.49 0.41 w t a = 70 c 0.31 0.26 junction & storage temperature range t j , t stg - 55 to 150 c g : gate d : drain s : source product summary v (br)dss r ds(on) i d n - channel 20v 300 m 0.96 a p - channel - 20v 520 m - 0.68 a
rev 1. 2 2 i - 27 - 2 n - & p - channel enhancement mode field effect transistor p a 607ua sot - 23 - 6 halogen - free & lead - free niko - sem thermal resistance ratings thermal resistance symbol typical maximum units junction - to - ambient 2 r ? ja n - ch 251 c / w junction - to - ambient 2 r ? ja p - ch 300 1 pulse width limited by maximum junction temperature. 2 the value of r ja is measured with the device mounted on 1in 2 fr - 4 board with 2oz . copper, in a still air environment with t a =25c . electrical characteristics (t j = 25 c, unless otherwise noted) parameter symbol test conditions limits unit min typ max static drain - source breakdown voltage v (br)dss v gs = 0v, i d = 250 ? gs = 0v, i d = - 250 ? gs(th) v ds = v gs , i d = 250 ? ds = v gs , i d = - 250 ? gss v ds = 0v, v gs = 8 v n - ch p - ch 30 30 u a v ds = 0v , v gs = 10 v zero gate voltage drain current i dss v ds = 16 v, v gs = 0v n - ch p - ch 1 - 1 ? ds = - 16 v, v gs = 0v v ds = 10 v, v gs = 0v, t j = 55 c n - ch p - ch 10 - 10 v ds = - 10 v, v gs = 0v, t j = 55 c drain - sour ce on - state resistance 1 r ds(on) v gs = 4.5v, i d = 0.5 a n - ch p - ch 146 442 300 520 m gs = - 4 .5v, i d = - 0.45 a v gs = 2.5 v, i d = 0.25 a n - ch p - ch 188 618 400 800 v gs = - 2 .5v, i d = - 0.1 a forward transconductance 1 g fs v ds = 5 v, i d = 0.5 a n - ch p - ch 2.5 1 s v ds = - 5 v, i d = - 0.45 a
rev 1. 2 3 i - 27 - 2 n - & p - channel enhancement mode field effect transistor p a 607ua sot - 23 - 6 halogen - free & lead - free niko - sem dynamic input capacitance c iss n - channel v gs = 0v, v ds = 1 0 v, f = 1mhz p - channel v gs = 0v, v ds = - 1 0 v, f = 1mhz n - ch p - ch 59 46 pf output capacitance c oss n - ch p - ch 18 18 reverse transfer capacitance c rss n - ch p - ch 9.7 9.6 total gate charge 2 q g n - channel v ds = 20 v, i d ? gs = 4.5 v, p - channel v ds = - 2 0 v, i d ? gs = - 4.5 v, n - ch p - ch 1. 4 1.1 nc ga te - source charge 2 q gs n - ch p - ch 0.1 0.2 gate - drain charge 2 q gd n - ch p - ch 0.3 0.3 turn - on delay time 2 t d(on) n - channel v ds = 1 0 v, i d ? gs = 4.5 v, r gen = 5.1 p - channel v ds = - 10 v, i d ? gs = - 4.5 v, r gen = 5.1 2 t r n - ch p - ch 36 30 turn - off delay time 2 t d(off) n - ch p - ch 86 76 fall time 2 t f n - ch p - ch 173 46 source - drain diode ratings and characteristics (t j = 25 c) continuous current i s n - ch p - ch 0.4 - 0.34 a forward voltage 1 v sd i f = 0.5 a , v gs = 0v n - ch p - ch 1.2 - 1.2 v i f = - 0.45 a , v gs = 0v reverse re covery time t rr i f = 1 a, dl f /dt = 100a / ? f = - 1 a, dl f /dt = 100a / ? rr n - ch p - ch 102 28 n c 1 pulse test : pulse width ? 300 ? s ec, duty cycle ? 2 % . 2 independent of operating temperature.
rev 1. 2 4 i - 27 - 2 n - & p - channel enhancement mode field effect transistor p a 607ua sot - 23 - 6 halogen - free & lead - free niko - sem output characteristics i d , drain - to - source current(a) transfer characteristics i d , drain - to - source current(a) v g s , gate - to - source voltage(v) v d s , drain - to - source voltage(v) normalized drain to source on - resistance t j , junction temperature( ? c) capacitance characteristic c , capacitance(pf) v d s , drain - to - source voltage(v) on - resistance vs temperature on - resistance vs gate - to - source voltage r ds(on) on - resistance(ohm) v g s , gate - to - source voltage(v) on - resistance vs drain current r ds(on) on - resistance(ohm) i d , drain - to - source current(a) 0 0.6 1.2 1.8 2.4 3 0 0.4 0.8 1.2 1.6 2 vgs=4.5 v vgs=1.8v vgs=1.6v vgs=1.4v vgs=2.5v 25 n - channel
rev 1. 2 5 i - 27 - 2 n - & p - channel enhancement mode field effect transistor p a 607ua sot - 23 - 6 halogen - free & lead - free niko - sem dc 100ms 10ms 1ms 0.01 0.1 1 10 0.1 1 10 100 note : 1.vgs= 4.5v 2.ta=25 ? c 3.r ja = 251 ? c/w 4.single pulse operation in this area is limited by rds(on) 0 0.9 1.8 2.7 3.6 4.5 0 0.3 0.6 0.9 1.2 1.5 vds=20v id=1a safe operating area single pulse maximum power dissipation i d , drain current(a) single pulse time(s) v d s , drain - to - source voltage(v) transient thermal response curve r(t) , normalized effective transient thermal resistance t 1 , square wave pulse duration[sec] power(w) source - drain diode forward voltage v sd , source - to - drain voltage(v) i s , source current(a) gate charge characteristics characteristics qg , total gate charge(nc) v gs , gate - to - source voltage(v) 25 150 0.1 1 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 0.7 1.4 2.1 2.8 3.5 0.001 0.01 0.1 1 10 100 single pulse r ja = 251 ? c/w ta=25 ? c single pulse duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 10 100 notes 1.duty cycle, d= t1 / t2 2.rthja = 251 /w 3.tj - ta = p*rthja(t) 4.rthja(t) = r(t)*rthja
rev 1. 2 6 i - 27 - 2 n - & p - channel enhancement mode field effect transistor p a 607ua sot - 23 - 6 halogen - free & lead - free niko - sem 25 125 - 20 0 0.4 0.8 1.2 1.6 2 0 1 2 3 4 0 0.4 0.8 1.2 1.6 2 0 0.9 1.8 2.7 3.6 4.5 id= - 0.45a 0 0.3 0.6 0.9 1.2 1.5 0 0.4 0.8 1.2 1.6 2 vgs= - 2.5v vgs= - 4.5v c , capacitance(pf) transfer characteristics output characteristics capacitance characteristic - v d s , drain - to - source voltage(v) normalized drain to source on - resistance t j , junction temperature( ? c) on - resistance vs temperature on - resistance vs drain current r ds(on) on - resistance(ohm) - i d , drain - to - source current(a) on - resistance vs gate - to - source voltage r ds(on) on - resistance(ohm) - v g s , gate - to - source voltage(v) 0 0.4 0.8 1.2 1.6 2 0 1 2 3 4 vgs= - 4.5v vgs= - 4v vgs= - 3v vgs= - 1.6v vgs= - 1.8v vgs= - 2.5v 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 - 50 - 25 0 25 50 75 100 125 150 vgs= - 4.5v id= - 0.45a ciss coss crss 0 10 20 30 40 50 60 0 5 10 15 20 25 p - channel - i d , drain - to - source current(a) - i d , drain - to - source current(a) - v d s , drain - to - source voltage(v) - v g s , gate - to - source voltage(v)
rev 1. 2 7 i - 27 - 2 n - & p - channel enhancement mode field effect transistor p a 607ua sot - 23 - 6 halogen - free & lead - free niko - sem dc 100ms 10ms 1ms 0.01 0.1 1 10 0.1 1 10 100 note : 1.vgs = - 4.5v 2.ta = 25 ? c 3.r ja = 300 ? c/w 4.single pulse operation in this area is limited by rds(on) 0 0.6 1.2 1.8 2.4 3 0.001 0.01 0.1 1 10 100 single pulse r ja = 300 ? c/w ta = 25 ? c 0 0.9 1.8 2.7 3.6 4.5 0 0.3 0.6 0.9 1.2 vds= - 20v id= - 1a source - drain diode forward voltage - i s , source current(a) - v sd , source - to - drain voltage(v) gate charge characteristics characteristics qg , total gate charge(nc) - v gs , gate - to - source voltage(v) safe operating area single pulse maximum power dissipation - i d , drain current(a) single pulse time(s) - v d s , drain - to - source voltage(v) transient thermal response curve r(t) , normalized effective transient thermal resistance t 1 , square wave pulse duration[sec] power(w) 25 125 0 1 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 single pulse duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 10 100 notes 1.duty cycle, d= t1 / t2 2.rthja = 300 /w 3.tj - ta = p*rthja(t) 4.rthja(t) = r(t)*rthja
|
